Browse by Relators
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Number of items: 4.
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Angelo Mudano'.
Tight-Binding Nonequilibrium Green's Function Modeling of Tunnel Field-Effect Transistors.
Rel. Alberto Tibaldi, Francesco Bertazzi, Simona Donati Guerrieri, Michele Goano. Politecnico di Torino, Master of science program in Nanotechnologies For Icts, 2023
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Bruno Coppolelli.
Modeling of Tunnel-FETs: accurate calibration of numerical and semi-analytical models.
Rel. Simona Donati Guerrieri, Alberto Tibaldi. Politecnico di Torino, Master of science program in Nanotechnologies For Icts, 2022
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Simone Molinaro.
Channel analysis of high electron mobility transistors: a pathway from the density matrix to the quantum drift-diffusion approach.
Rel. Simona Donati Guerrieri, Alberto Tibaldi, Francesco Bertazzi. Politecnico di Torino, Master of science program in Electronic Engineering, 2022
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Eva Catoggio.
TCAD analysis of GaN FinFET structures and their parametric sensitivity.
Rel. Simona Donati Guerrieri, Fabrizio Bonani. Politecnico di Torino, Master of science program in Electronic Engineering, 2019
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