The discovery of ferroelectricity in the non-centrosymmetric orthorhombic crystal phase of HfO2 in 2011 has led to renewed interest in ferroelectric non-volatile memories. In particular, the recent widespread attention for hafnia thin films can be attributed to their remarkable performance in terms of low power consumption, remnant polarization, memory window, retention, endurance and switching speed, combined with their already well-known compatibility with CMOS technology. Such qualities meet the growing demand for high-speed computation and high-density data storage, paving the way for technologies such as in-memory computing and neuromorphic computing. These technologies can be implemented using FeFETs (ferroelectric field-effect transistors) and FeCAPs (ferroelectric capacitors).