Gabriele Petitto
Towards Scalable Silicon Qubits: TCAD Simulations of Gate-Defined Single-Electron Transistors.
Rel. Matteo Cocuzza, Jordi Llobet Sixto, Esteve Amat Bertran. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2025
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Abstract
Many options have been proposed to physically implement qubits (the fundamental information units of quantum computers) including well-known solutions such as superconducting qubits, trapped ions, and photonic qubits, as well as more research-level implementations like neutral atom-based qubits. Among these, silicon quantum dot-based qubits are considered one of the most promising alternatives, thanks to the relatively long coherence times associated with the weak interaction between electron spins and the silicon crystal lattice, as well as their compatibility with CMOS manufacturing processes and potential scalability. This latter advantage allows the use of well-established and optimized industrial manufacturing processes to scale up and integrate multiple physical qubits into a single chip, enabling the encoding of logical qubits to improve robustness against decoherence.
A key element in silicon qubit platforms are gate-defined Single-Electron Transistors (SETs), used for single-shot readout of spin qubit states through the spin-to-charge conversion mechanism
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