The semiconductor industry has required a significant increase in energy efficiency and computational performance of the electronic devices for decades. This results in the search for low-power, high-frequency devices. To meet these demands it was necessary to replace the electrical signals with photonic signals. One of the possible candidates are group III-V semiconductor materials, which can efficiently emit light, but they are not CMOS compatible, so their integration with Si chips is very expensive. Ge-rich SiGe alloys grown in the hexagonal crystal structure showed a direct bandgap nature. SiGe compounds are epitaxially grown in the hexagonal phase by MOVPE on thin hexagonal GaAs nanowires, that act as templates.