Since the strain technology was introduced at the 90nm node, Silicon-Germanium (SiGe) is the most widely used p-MOS Source/Drain (S/D) material. With the continuous down-scaling of transistors, the contact resistance (Rc) at the S/D-metal interface is becoming a major part of the parasitic resistance in the device. Rc depends on two factors: it is directly proportional to the contact resistivity (ρc) and inversely proportional to the contact area between electrodes and S/D. In order to decrease the Rc impact, different approaches have been studied in the last years. Complex doping engineering allows achieving ultra-low ρc, while a higher contact area can be guaranteed by implementing a wrap around contact (WAC).