LARGE ARRAY COMPILER FOR AUTOMATIC SRAM GENERATION AND MODELING
Giuseppe Ferotti
LARGE ARRAY COMPILER FOR AUTOMATIC SRAM GENERATION AND MODELING.
Rel. Danilo Demarchi, Timothy Constandinou. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2021
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Abstract
ICs designers frequently employ memory compilers to produce the memory with desired dimensions and configurations rapidly. Memory design methodology in the academic environment is often insufficient: most process design kits (PDKs) does not include a memory compiler. Besides, the customization of memory and cell dimensions and specific peripherals is constrained by these industrial options, and the internal function/layout is commonly inaccessible. Since many different size arrays can be produced (mainly constrained by system data storage need, area, power, and performance), it is practically impossible to have a perfectly tailored bit-cell for the specific system requirements with modern compilers. This project aims to overcome this problem by designing a simple, modular and flexible SRAM memory compiler that uses a 6T-SRAM cell in 180nm TSMC technology with customizable transistor widths: in this way, the system designer can select the desired transistor sizes in the cell, optimized for the system requirements and size of the array.
This bottom-up approach permits to fulfil designer's specific needs without renouncing flexibility, transparency and integration with IC design existing tools
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