Silicon devices have undergone a massive down scaling process in the last decades, this brought transistors near the physical limitations introduced by the quantum mechanics. In this area the boundaries of conventional computation are stretched to their limits in order to increase performances and decrease power consumption. This path is rapidly becoming more expensive and major breakthroughs are more difficult to reach. In this scenario different technologies are being investigated to fill the holes left by silicon, especially computing technologies that can be non-volatile. Hafnium dioxide (HfO2) stands out in this landscape because of its ferroelectric properties that make of it an intrinsic memory.