26 Luglio 2024

Aria Sharifian. Modeling and Simulation of an Oxygen Exchange Induced Resistive Switching in a Two Layer Valence Change Memory Cell. Rel. Carlo Ricciardi, Rainer Martin Waser. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2024

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