Livello precedente |
Aria Sharifian. Modeling and Simulation of an Oxygen Exchange Induced Resistive Switching in a Two Layer Valence Change Memory Cell. Rel. Carlo Ricciardi, Rainer Martin Waser. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2024