Silvia Scanu
Rarefied Binary Gas Diffusion in Microchannels: A DSMC Study for EUV-Relevant Conditions.
Rel. Andrea Ferrero. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Aerospaziale, 2026
Abstract
ASML plays a central role in the global semiconductor industry as the leading supplier of advanced lithography systems used in the high-volume manufacturing of integrated circuits. In particular, ASML’s Extreme Ultraviolet (EUV) lithography technology has enabled the continuation of device scaling by allowing the patterning of features at nanometer length scales. EUV systems operate under ultra-high vacuum conditions and require extremely stringent contamination control to maintain optical performance and patterning accuracy. Even trace amounts of residual gases or contaminants can adversely affect critical system components, making the understanding and control of gas dynamics and contaminant transport within EUV environments a key technological challenge.
At these scales, characteristic flow dimensions become comparable to the molecular mean free path, resulting in rarefied gas flows for which continuum-based models such as the Navier–Stokes equations are no longer valid
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