In the era of advanced technology , non-volatile (NV) Resistive Random Access Memory (ReRAM or RRAM) represents a revolutionary paradigm, able to withstand the Big Data requirement. Thanks to its intrinsic low power consumption, low cost, fast access times and high memory density, RRAM is forecasted to be a promising heir of flash technology. Based on a simple two terminal metal-insulator-metal (in this work, said to be TiN/HfO2/Ti) structure, its conductivity can be controlled by the application of a proper bias voltage during the programming phase, where the device moves from SET (HRS -> LRS) to RESET (LRS -> HRS) state.