Andrea Cassini
Electrothermal Modelling of Phase Change Memory Devices for Analog In-Memory Computing.
Rel. Carlo Ricciardi. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2024
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Abstract
Nowadays the digital era is becoming increasingly demanding on memory devices: higher memory capacities that are both reliable and cost-effective are needed for big data applications. Flash-based storage devices are now dominating the market, but they exhibit scalability limits. Researchers have started to explore new opportunities, looking at emerging memory devices, mainly non-volatile, that can replace or complement the actual storage technologies. The goal is to release the processor performance that is now constrained by the memory access and power consumption of the memory unit. Phase Change Memory (PCM) is considered one of the major candidates for such a purpose. PCM is, indeed, a non-volatile memory recently exploited for nanometric data storage and non-Von Neumann computing such as in-memory computing and neuromorphic computing.
It consists of a layer of phase-change material sandwiched between two electrodes; the volume should be small enough to guarantee a low power switching capability
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