Flash memory is an electronic non-volatile storage. Flash memory uses floating-gate transistor as a programmable element and is based on Electrically Erasable Programmable Read-Only Memory (EEPROM) technology. Microcontrollers commonly integrate embedded Flash memories (eFlash) as storage solution, because they offer an excellent balance of all critical metrics of embedded storage: read/write access times, throughput, storage permanence, capacity, density. The testing of flash memories consists in applying a sequence of program, read and erase cycles, alternating different write patterns and reading successions. Patterns and reading successions are specifically designed to trigger and detect faults. The testing process of flash memories is particularly time consuming (given the high storage capacity), and power intensive (eFlash modules occupy a large portion of the die area and require high voltages for programming and erasing).