
Pranjal Kumar Deb
Fabrication of highly scalable Non Volatile Memory.
Rel. Gianluca Piccinini, Fabrizio Mo, Yuri Ardesi, Roberto Listo. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2025
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Abstract: |
Fabrication of highly scalable Non Volatile Memory The advancement in modern electronics has created a growing need for fast, reliable and energy efficient memory technologies. Traditional memory technologies like DRAM and Flash memory are facing challenges in terms of durability, efficiency and scalability as technology continues to shrink. This thesis provides a comprehensive literature review on emerging nonvolatile memories that are highly scalable and energy efficient with a particular focus on technologies like Fe-FET, GAAFET based NVM and ReRAM. The review starts by addressing the current scenario of the nonvolatile technology ad dressing its limitation followed by the importance of nonvolatile with a emphasize on scaling to sustain Moore’s law. It dives deep into Ferro-electric based NVM exploring its historical background and theory behind its ferro-electric phase transition followed by why hafnium di oxide has become a standout material for Fe-FET. This thesis also analyzes and compares various deposition techniques of hafnium di oxide which decides the overall performance parameter of the Fe-FET. Various structures of Fe-FET are being analyzed along with the pros and cons of each structure. Next, the thesis explores GAAFET based nonvolatile memories starting with the evo lution of transistors followed by the different structures of GAAFET. It highlights the usage of Nanosheets, how it can enhance the charge trapping phenomenon of the SONOS memory due to its superior electrostatic control. Finally, the thesis explores into the domain of resistive switching memories analyzing its mechanism and the preferred material for the fabrication of the resistive switching based NVM. It dives into the fabrication of 1T ReRAM along with its integration of MO SFET which highlights the potential of Re-RAM for future generation computing. Overall, the thesis provides a comprehensive overview of the current limitations of the NVMtechnology and its replacement compiling various research to provide a solid insight into the fabrication process, scalability and application in semiconductor industry. |
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Relatori: | Gianluca Piccinini, Fabrizio Mo, Yuri Ardesi, Roberto Listo |
Anno accademico: | 2024/25 |
Tipo di pubblicazione: | Elettronica |
Numero di pagine: | 107 |
Soggetti: | |
Corso di laurea: | Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering) |
Classe di laurea: | Nuovo ordinamento > Laurea magistrale > LM-29 - INGEGNERIA ELETTRONICA |
Aziende collaboratrici: | Politecnico di Torino |
URI: | http://webthesis.biblio.polito.it/id/eprint/36847 |
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