The Monte Carlo method is among the best techniques for the simulation of electronic transport in mesoscopic semiconductor devices, thanks to the possibility of including a more detailed physical description compared to conventional approaches such as drift-diffusion. In the present work, advanced models of ionized impurity scattering, along with an algorithm to include the Pauli exclusion principle, have been investigated and implemented in a Monte Carlo code in order to treat high doping densities and degeneracy, that are especially important in the description of optoelectronic devices. Furthermore, a model to include a full-band description of the electronic dispersion relation is analyzed, since it is crucial in dealing with high energy transport.