Quantum computing is a breakthrough computation paradigm capable of overcoming the constraints of classical computers. Several semiconductor-based solutions are currently under research to implement qubits, with one of the most fascinating techniques being the utilization of electron spin qubits inside quantum dots, thanks to their flexibility, small footprint, and compatibility with the CMOS integration technique. This work explores three silicon-based quantum dot heterostructures: two double quantum dot heterostructures (one realized with SiGe and the other one SiMOS) and a four quantum dot SiGe heterostructure. The above structures have been analyzed using the low-level FEM-based simulator QTCAD to derive essential physical parameters critical for creating electron spin qubits.