Since their discovery, topological insulators have attracted significant research interest due to their nontrivial topological properties. These properties give rise to the emergence of edge states that propagate along the interface between inversed topological invariants. These edge states assume great relevance because of their ability to resist perturbations and so being immune to back-scattering. For these reasons, they are referred to as topologically protected states. The discovery of this phenomenon in quantum systems and the potential of this unidirectional transport with negligible attenuation inspires and led to the demonstration of the equivalent topological edge states in acoustic technologies. The aim of this work is to investigate the existence of topological protected states at the interface of a Piezo-Electric MEMS device working in the RF range.