The continuous scaling of the electronic technologies and the development of nonplanar device architectures requires to pattern materials more precisely for the creation of specific features. This is becoming extremely challenging, causing the development of self-alignment bottom-up nanoscale fabrication techniques, such as Atomic Layer Deposition (ALD). It is a thin film deposition technique that involves the sequential exposure of a substrate to two self-limiting half reactions. It allows for precise control of the film thickness, through a layer-by-layer growth, and of the film composition, through an accurate choice of reactants and co-reactants. The growth can be engineered to deposit a vapor phase material just on a predetermined surface in a selective way.