Roberto Guido
A CMOS-compatible bipolar analogue switching redox-based ReRAM with TaOx/HfO2 bilayer.
Rel. Carlo Ricciardi. Politecnico di Torino, Master of science program in Nanotechnologies For Icts, 2021
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Abstract
Complementary metal-oxide-semiconductor(CMOS)-based von Neumann architecture suffers from intrinsic power and speed inefficiencies, due to the data transfer between processor and the memory unit. This is commonly addressed as von Neumann bottleneck. The processing of the huge amount of information collected with big data requires the transition to novel computing paradigms and architectures, such as bioinspired computing. It relies on memristor technology which allows to co-locate the storage and the processing of data while ensuring low-cost fabrication and high-density of integration. Among the most promising memristive candidates for building future artificial neural networks (ANNs) there are redox-based valance-change mechanism (VCM) resistive random-access memories (ReRAMs).
They gained interest for the large amount of distinguishable resistance levels achievable as well as for their scalability
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