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Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability

Federico Umberto Pertosa

Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability.

Rel. Francesco Musolino, Franco Maddaleno. Politecnico di Torino, Master of science program in Electronic Engineering, 2020

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Abstract

Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability

Relators

Francesco Musolino, Franco Maddaleno

Publication type

Electronic

URI

https://webthesis.biblio.polito.it/id/eprint/14544
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