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Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability

Federico Umberto Pertosa

Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability.

Rel. Francesco Musolino, Franco Maddaleno. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2020

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Abstract:

Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability
Relators: Francesco Musolino, Franco Maddaleno
Academic year: 2019/20
Publication type: Electronic
Number of Pages: 83
Subjects:
Corso di laurea: Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering)
Classe di laurea: New organization > Master science > LM-29 - ELECTRONIC ENGINEERING
Ente in cotutela: Aalborg University (DANIMARCA)
Aziende collaboratrici: Aalborg University
URI: http://webthesis.biblio.polito.it/id/eprint/14544
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