Simulation and modeling of Racetrack memories with VCMA synchronization

This master thesis will concern the study and the application of the Voltage Controlled Magnetic Anisotropy (VCMA) effect on Racetrack Memory. The VCMA allows to locally modify the anisotropy of the material through an electric potential. This variation can be used to create potential barriers, or potential holes to favor the nucleation of the domains and to synchronize the movement of the bits, stored in form of domains, along the Racetrack. In the specific case of a Racetrack, being able to control the potential barrier through VCMA would allow to reduce the currents involved for the movement of the Domain Walls. This technique is an alternative to the creation of notches, which experimentally could be more difficult to realize. This thesis focuses on the study and physical modeling of the VCMA effect applied to Racetrack technology through the use of micromagnetic simulations and an analytical model which describe the phenomenon. An equation which describes the effective pinning field of a VCMA “gate” is derived in the thesis. The aim of the study is to evaluate the compatibility and the benefits of the application of this phenomenon to Racetrack Memory, and both the timing and the energetic performance of the resulting device.