Ferroelectric Thin Films Characterization for Vertical Transistor Integration Toward Future In-Memory Computing

With the imposition of the Artificial Intelligence as the main trend and its conflict with the sustainability goals that our world must satisfy, a new paradigm of hardware must be created to satisfy the huge request in computation that this tool requires. Such a solution can be the socalled "in-memory computing", which is meant to merge the memory component with the computational one. It is possible to do so by using Ferroelectricity of thin films (10 nm), recently discovered in Hafnium oxide (HfO2). They can be used as the gate of a transistor, obtaining a Ferroelectric Field Effect Transistor (FeFET). This Master’s thesis focuses on their electrical characterization, concerning HZO (Hf and Zr oxides) thin films, evaluating several configurations of planar capacitors, MIM and MIS (Metal-Insulator-Metal and -Semiconductor), using different fabrication methods, searching for those which give the best parameters, as the Charge per unit area and the Endurance.