This thesis presents the design and implementation of a Single-Pole Double-Throw (SPDT) radiofrequency (RF) switch circuit operating in the 8 to 14 GHz frequency band, such design focuses on a viable option for the implementation on a T/R Module. The design integrates Gallium Nitride (GaN) technology on a Silicon Carbide (SiC) substrate, chosen for its superior power-handling capabilities and low substrate leakages. Advanced simulation tools were used to optimize the switch's performance parameters, including insertion loss, isolation, and return loss across the target frequency band. Additionally, Monte Carlo analysis and temporal analysis of the switch were performed to determine the maximum switching times possible.