Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability
Federico Umberto Pertosa
Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability.
Rel. Francesco Musolino, Franco Maddaleno. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2020
|
Preview |
PDF (Tesi_di_laurea)
- Tesi
Licenza: Creative Commons Attribution Non-commercial No Derivatives. Download (16MB) | Preview |
Abstract
Gate drivers with an improved short circuit detection method for enhanced SiC MOSFET reliability
Relatori
Tipo di pubblicazione
URI
 |
Modifica (riservato agli operatori) |
