Livello precedente |
Matteo Angelozzi. Monolithic InAs/InGaAs quantum dot lasers Experimental sub-threshold characterization of single section, broad-area devices for different p-doping concentrations and active region lengths. Rel. Paolo Bardella. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2020