Silicon Schottky photodiodes represent a cost effective solution for integrated optical detection compatible with standard CMOS technology, and are suitable for operation at infrared wavelengths (1.31 um –1.55 um), beyond the optical absorption cutoff of silicon. This thesis develops a complete modeling and characterization framework for these devices, combining physics based TCAD simulations carried out at Politecnico di Torino with experimental measurements performed at KU Leuven. A detailed Sentaurus model has been implemented, including electrostatics, carrier transport, mobility degradation, recombination mechanisms, and Schottky contact physics with barrier lowering. Optical photogeneration under backside illumination is also considered. Both DC and small signal AC analyses are performed, enabling the extraction of electrical and optoelectronic characteristics of the devices.