Perovskite solar cells (PSCs) are a promising photovoltaic technology with the potential to achieve high power conversion efficiencies while maintaining a low-cost fabrication process. However, a critical performance bottleneck in PSCs is the high defect density at the interface between the perovskite absorber and the charge transport layers, leading to significant non-radiative recombination and thus limiting the overall efficiency. In this research, formamidinium lead triiodide (FAPbI3) has been investigated as a perovskite composition with a suitable bandgap for high-efficiency single-junction devices. This work explored strategies to mitigate interfacial recombination losses to enhance efficiency. The quality of the interfaces was analyzed through photoluminescence measurements.