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Investigation of well doping and mobility parameters down to cryogenic temperatures with L-UTSOI model: electrical measurements and parameter extractions

Andrea Petruso

Investigation of well doping and mobility parameters down to cryogenic temperatures with L-UTSOI model: electrical measurements and parameter extractions.

Rel. Gianluca Piccinini. Politecnico di Torino, Master of science program in Electronic Engineering, 2024

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Abstract:

Characterization and modeling of FD-SOI transistor at cryogenic temperatures
Relators: Gianluca Piccinini
Academic year: 2024/25
Publication type: Electronic
Number of Pages: 61
Subjects:
Corso di laurea: Master of science program in Electronic Engineering
Classe di laurea: New organization > Master science > LM-29 - ELECTRONIC ENGINEERING
Aziende collaboratrici: CEA Grenoble
URI: http://webthesis.biblio.polito.it/id/eprint/34049
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