One of the possible tools that can be exploited for data storage nowadays are the Random Access Memories. The main advantage of this technology is that it allows to achieve almost identical writing and reading times, regardless of the position of the information inside the memory. One of the possible implementations of RAM is represented by the Magnetic RAM (MRAM), which relies on the magnetic properties of the materials in order to store data. MRAMs represent non-volatile types of Random Access Memories. The MRAM is based upon the possibility to manipulate the resistance value of a multi-layer structure according to the relative orientation of the magnetization between the ferromagnetic layers.