CMOS-MEMS capacitive resonant pressure sensor and accelerometer are a state-of-the-art technology in the field of pressure and acceleration sensing, which have demonstrated superior performance compared to other types of sensors. Their development faces challenges related to BEOL integration and manufacturability, which require careful design and fabrication processes. Despite these challenges, CMOS-MEMS sensors offer a number of advantages, such as high sensitivity, low power consumption, and compatibility with standard CMOS processes. They have been implemented in a variety of applications, including atmospheric pressure or acceleration sensing, and are expected to continue to be refined and optimized in the future. This work has the aim to discuss the most important and general aspects related to sensors made with CMOS-MEMS technology, leading the way through the most interesting design characteristics of the CMOS-MEMS Capacitive resonant pressure sensor and Accelerometer.