Perovskite solar cells (PSCs) have shown a remarkable improvement in efficiency over the past few years, giving high hopes for the future application of this technology in solar photovoltaic electricity production at industrial scale. Nowadays PSCs are inferior to crystalline silicon, especially in terms of efficiency and stability, thus preventing large scale market entry. A common issue of these cells involves the contact surfaces between the perovskite absorber and the charge extraction layers. High densities of superficial defects cause significant non-radiative recombination of charge carriers, thus lowering the achievable open circuit voltage. The work's focus is the interface between the perovskite and the electron transport layer of p-i-n PSCs, modified by introducing low-dimensional perovskites through novel passivation techniques.