This project was developed in a conjoint program between Institute Jean Lamour located in Nancy (France) and the New York University, in each institution, a significant part of the work was carried out with the important collaboration of the local teams. The topic of this work can be framed into what is called spintronics which is a fairly recent field of solid-state physics, in these years plenty of applications were invented among which the most important has to be found in magnetic memories, which is the specific application addressed by this project. In particular, we are referring to the newest approach found in the use of spin-orbit torque to achieve the latest generation MRAM which can be fabricated using CMOS compatible processes: SOT-MRAMs.