Ludovico Carraria Martinotti
A Physical Model of Filamentary TaOx/HfO2 ReRAM Devices.
Rel. Carlo Ricciardi. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2022
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Abstract
The advancement of information technology has increased exponentially the amount of data that is gathered and that requires processing, and the latter is predicted to become one of the most energy demanding operations in the very near future. Current data processing relies on Complementary Metal-Oxide-Semiconductor (CMOS) technology, but even the most energy efficient implementations suffer from an intrinsic power and speed inefficiency known as the von Neumann bottleneck, caused by the data transfer between memory and processing unit. It is therefore necessary to transition to new computing architectures and paradigms such as bio-inspired computing. The key component of these new solutions is the memristor, an element with multiple resistance levels that can be modified in a non-volatile manner.
One of the most promising memristive technologies is filamentary valence-change mechanism (VCM) Resistive Random Access Memory (ReRAM), due to its scalability, ease of integration with current CMOS technologies and resistance range
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