The rushing demand for higher performances in electronics is constantly pressing the market. Nowadays the technology at our disposal has reached high levels of improvement and complexity and day by day new solutions are found. For decades, silicon devices have dominated the power electronics market thanks to their breakthroughs in material quality, improvement of the fabrication techniques and processes, and in the architecture of the devices. By now, unfortunately, silicon exploitation is reaching a limit and for power application this material has saturated its capabilities, having no chances to tackle the new technologies based on wide bandgap material, as an example silicon carbide (SiC) and gallium nitride (GaN), which development is mainly linked to the increased demand of renewable energy, electrification of the powertrain in the automotive systems and the growing demand for miniaturization of dimensions and increased device efficiency in power management applications.