This master thesis will concern the study and the application of the Voltage Controlled Magnetic Anisotropy (VCMA) effect on Racetrack Memory. The VCMA allows to locally modify the anisotropy of the material through an electric potential. This variation can be used to create potential barriers, or potential holes to favor the nucleation of the domains and to synchronize the movement of the bits, stored in form of domains, along the Racetrack. In the specific case of a Racetrack, being able to control the potential barrier through VCMA would allow to reduce the currents involved for the movement of the Domain Walls.