The modern complementary metal oxide-semiconductor (CMOS) technology may reach their physical limits in the next decade. To be able to continue to improve the device performance, and to further lower the energy cost per operation might require the introduction of new and disruptive technologies. Spin waves are collective low-energy excitation of spins in ferromagnetic materials. Spintronic devices based on spin waves are promising to complement the CMOS transistor technology due to their high potential for significant power and area reduction per computing throughput. Hence, the understanding of the spin-wave mode formation, their propagation properties, and the detection schemes are of high interest for the development of such technologies.