InGaZnO (IGZO) is a quaternary, n-type semiconducting oxide under extensive study due to its promising mechanical and electrical properties. Initially discovered and studied in the crystalline form for Thin Film Transistor (TFT) application, more recently the amorphous phase has become a good candidate for a wider spectrum of electronic devices ranging from back-end-of-line compatible logic (due to its low thermal budget) to selectors for emerging memory architectures. However, several challenges are associated with use, tuning and control of IGZO properties. Among others, controlling the film quality and stoichiometry during the manufacturing process can be complicated due to the large variety of IGZO phases.