The importance of photonic technologies is steadily growing in our daily lives. A new frontier of research is the development of non-classical light sources: sources that produce streams of photons with controllable quantum correlations. A central building block, in particular, is a single-photon emitter (SPE). Unlike classical light sources, SPEs are fundamental quantum devices for many scalable and leading technologies, such as quantum information and information, precision metrology and imaging. The ability to tailor and control quantum emitters, in order to realize efficient and scalable architectures, depends on site-selective defect engineering. In this work we have investigated the electronic properties of an InSe monolayer and its applicability as SPE.