Investigation of well doping and mobility parameters down to cryogenic temperatures with L-UTSOI model: electrical measurements and parameter extractions
Andrea Petruso
Investigation of well doping and mobility parameters down to cryogenic temperatures with L-UTSOI model: electrical measurements and parameter extractions.
Rel. Gianluca Piccinini. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2024
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Abstract
Characterization and modeling of FD-SOI transistor at cryogenic temperatures
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