polito.it
Politecnico di Torino (logo)

Application of novel graphene devices and topological insulators to quantum resistance metrology

Marta Musso

Application of novel graphene devices and topological insulators to quantum resistance metrology.

Rel. Massimo Ortolano, Martina Marzano. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2024

[img] PDF (Tesi_di_laurea) - Tesi
Accesso riservato a: Solo utenti staff fino al 31 Ottobre 2027 (data di embargo).
Licenza: Creative Commons Attribution Non-commercial No Derivatives.

Download (22MB)
Abstract:

This thesis deals with novel devices in the field of quantum resistance metrology. New ladder networks of graphene quantum Hall effect devices can be used as quantized high-resistance standards, which can reduce the uncertainty in calibration of high resistances using dual source bridges. The study of the behavior of magnetically doped topological insulators enables the study of quantization conditions and breakdown mechanisms. Such devices exhibit quantum anomalous Hall effect and could establish themselves as resistance standards without external magnetic fields. These developments are key to provide a foundation for further exploration and potential breakthroughs in the field of quantum resistance metrology.

Relatori: Massimo Ortolano, Martina Marzano
Anno accademico: 2024/25
Tipo di pubblicazione: Elettronica
Numero di pagine: 68
Soggetti:
Corso di laurea: Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering)
Classe di laurea: Nuovo ordinamento > Laurea magistrale > LM-29 - INGEGNERIA ELETTRONICA
Ente in cotutela: National Institute of Standards and Technology (NIST) (STATI UNITI D'AMERICA)
Aziende collaboratrici: National Institute of Standards and Technology
URI: http://webthesis.biblio.polito.it/id/eprint/32944
Modifica (riservato agli operatori) Modifica (riservato agli operatori)