The peculiar feature that nowadays accompanies our society, and consequently our lives, is definitely the technological progress in all kinds of sectors. The utilisation of innovative materials is an important step in evolution though the optimal exploitation of their properties in specific applications. Clearly, this is made possible by developments in the technological and production processes inherent in this major field of research. Among the modern semiconductor materials, silicon carbide (SiC) certainly plays an important role due to its unique chemical, physical and mechanical properties, making it ideal for various fields of application. However, the high cost of producing this material nowadays severely limits its use.