This project focuses on the morphological and compositional characterization of molybdenum (Mo) contacts applied to silicon carbide (SiC) substrates, with the aim to enhance the efficiency of SiC Schottky diodes. In recent years, wide bandgap semiconductors like silicon carbide (SiC) have become pivotal in power electronics because they offer much better performance if compared to traditional Si-based technology. This leap forward is attributed to the remarkable physical characteristics of these materials, including their wide bandgap, high critical electric field, and high saturation velocity. This class of semiconductors also ensures that devices can function effectively under demanding conditions, such as high temperature, high power, and high-frequency applications and leads to overcome the limitations of Si-based devices in power electronics.