The use of FinFET and UTBB technologies for the realisation of analog and RF structures

This thesis explores the potential of replacing traditional MOSFET technology with FinFET devices, focusing on performance improvements in digital and analog applications. The study analyses FinFET’s advantages over MOSFET, particularly regarding power efficiency, speed, and scalability in advanced semiconductor nodes. Emphasis is placed on FinFET's enhanced control over SCE due to its three-dimensional gate structure, which reduces leakage currents and improves overall device performance. In addition to comparing the fundamental characteristics of MOSFET and FinFET technologies, the thesis also examines the impact of FinFET geometry, including parameters such as hfin, wfin and AR, on device performance. Special attention is given to the implications of these geometric factors on analog circuit design, such as VCO and LNA. The research extends to real-world implementations and simulations, demonstrating how FinFET technology can be leveraged in RF applications. The work also investigates future trends, such as using nanosheet and nanowire devices, which promise to improve analog and RF circuits' capabilities. Additionally, this study highlights the importance of precise electrical measurements and model extraction techniques necessary for accurate FinFET-based analog designs. Ultimately, the thesis concludes that while FinFET technology presents significant advantages, carefully considering design parameters, material choices, and fabrication processes is essential for fully realising its potential to replace MOSFET in modern electronics. The experimental results and simulations offer insights into the future trajectory of FinFET integration into both digital and analog circuits.