Over the past few decades, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have garnered significant attention for their exceptional electrical performance and flexibility in functional modulation. These semiconducting materials, characterized by a layered structure with weak van der Waals interlayer interactions, present a bandgap ranging from 0.5 eV to 2.0 eV, making them promising candidates for future spintronic and valleytronic applications. Unlike graphene, TMDCs possess a substantial bandgap, making them suitable for transistor fabrication. A major application of TMDCs is in field-effect transistors (FETs), where their distinct properties, such as potential immunity to short-channel effects and reduced scattering due to their intrinsic 2D confinement, are utilized to potentially outperform conventional silicon-based devices.