Some performances of the resistive switching mechanisms in Redox-based Random Access Memory (ReRAM) Valence Change Mechanism (VCM) devices are listed to make it one of the candidates for the future innovation of non-volatile memory application. There is a need for detailed and precise explanations of their microscopic and nanoscopic behaviors. Hence, in this thesis, features of the complex dynamics of bipolar resistive switching of ReRAM devices, more specifically VCM resistive memory devices with HfOx/TaOx bilayer stacks, are broughtto light. A series of one-dimensional simulations with the finite element method is carried out using COMSOL Multiphysics software to investigate the impact of applied external biases on internal prop- erties such as oxygen vacancy concentration and conduction band energies.