In the past decades, searches to overcome the limits of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been carried out. Tunnelling Field Effect Transistors (TFETs) have been considered as a possible candidate to replace MOSFET. Based on band-to-band tunnelling, TFET can achieve lower Subthreshold Slope, below the 60mV/dec limit of the MOSFETs, higher Ion/Ioff ratio and so has been considered for low power application. A drawback of TFET is the ambipolarity: the device turns on for both positive and negative voltages applied to the gate. In this work, a digital circuit performance evaluation of TFETs has been performed in Cadence Virtuoso.