Modern technology requires smaller transistors every year, the pursuit of miniaturization on the current devices has shown several difficulties such as leakage current and short channel effects, mostly due to the necessary formation of abrupt source/drain junctions in the channels. Among the possible candidates, junctionless transistors offer an interesting solution for these issues. This project aims to analyze the working principles of a junctionless transistor and to provide a fabrication procedure that allows to obtain a similar device in the USN’s MEMS laboratory. This work is part of a broader project, which aims to define and analyze how the junctionless transistor could become in the future the driving technology in electronics.