The advent of silicon carbide (SiC) technologies is leading to increasingly performant power converters, allowing for an increase in power density, voltage / current levels, and switching frequencies. Therefore, in recent years, the need to compare the performance of the SiC based converters with those of the counterparts using silicon (Si) technology has arisen, so to justify the additional costs and technical issues introduced from this new technology. According to this scenario, the goal of this thesis is to perform a fair comparison between the performance of a Si-based voltage source inverter (VSI) with those of a custom-made one that uses SiC technology.