Development of an innovative n-LD-MOSFET in BCD10 technology
Danilo Covello
Development of an innovative n-LD-MOSFET in BCD10 technology.
Rel. Gianluca Piccinini. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2020
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Abstract
Nowadays, more and more electronic systems and applications fields, ranging from the automotive sector, energy management and distribution to IT and consumer industry, require devices with the ability to drive high current loads along with the ability to sustain a high voltage drop, both when they are ON and OFF. Furthermore, the need for a very small power dissipation is becoming rapidly a crucial point in the design of new transistors or complex systems. As a consequence, it is necessary firstly, to increase the power transfer efficiency and, secondly, to limit the heat generation. Integrated power transistors are born with the idea of combining all these requirements to have the best trade-off among high current, low ON Resistance, wide operating frequency range, low static consumption, good thermal stability, high reliability, and small size.
In the last 30 years, the market demands showed an unstopped growth due to the increase in the number of interested fields, produced units, and of new complex and powerful applications with higher power demand
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