Lorenzo Avataneo
Simulation of GaN-based LEDs and solar cells: correlating quantum-corrected models and experimental characterizations.
Rel. Michele Goano, Alberto Tibaldi, Francesco Bertazzi, Pierluigi Debernardi. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2019
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Abstract
Nitride alloys have emerged as the most promising semiconductor compounds for ultraviolet (UV) applications. GaN-based LEDs are of particular interest in the medical environment, the use of UV light for disinfection in clinical settings and for catalyzing chemical reactions is well known. Color-coded LED microscopy (cLEDscope) is a novel computational microscopy technique capable of multi-contrast and quantitative phase imaging of biological specimens using color-multiplexed illumination. GaN-based solar cells find their main application when incorporated in multi-junction photovoltaic structures which can provide high theoretical conversion efficiencies. In addition, it has been demonstrated that these solar cells exhibit excellent thermal stability and high-energy-proton radiation resistance which makes them suitable to be used in harsh environments such as concentrated sunlight and space applications.
However, most of the reported InGaN-based solar cells are not as efficient as expected, mostly due to the difficulty of growing high crystalline quality InGaN alloys
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