Etude expérimentale et modélisation des limites dimensionnelles de composants de puissance GaN pour convertisseurs haut rendement = Experimental study and modeling of GaN device size limitation for high efficiency power converters

In this poster, the GaN diode architecture was studied in order to check its limits in terms of reverse voltage before breakdown. It is expected that an increase of its breakdown voltage at identical feature size could allow achieving higher voltage devices at a reduced cost. The first part of this work was dedicated to studying the impact of architectural parameters on the lateral breakdown characteristics of the diodes. A correlation between the simulation and the experimental measurements is obtained, suggesting a possible breakdown at the cathode side for low anode to cathode distance. The second part was dedicated to a TCAD simulation study of new diode architectures in order to improve the electric field distribution in the device and therefore to overcome the actual architecture limitation. A new architecture: the slanted field plate transitions showed an electric field peak reduction at critical points without degrading the other characteristics.